High Power VCSEL Epi Wafer

High Power VCSEL Epi Wafer - VCSEL

Application

Iris recognition; IR illumination; Gesture recognition; Automotive sensing; Time of Flight

Type

High Power

WL(nm)

810

Wafer size

4", 6"

Substrate

GaAs

Demonstration

Po= 5mW-5W, SE>0.9 W/A, PCE= 40%~47%

High Power VCSEL Epi Wafer - VCSEL

Application

Security; Gesture recognition; Automotive sensing; Time of Flight; IR illumination

Type

High Power

WL(nm)

850

Wafer size

4", 6"

Substrate

GaAs

Demonstration

Po= 5mW-5W, SE>0.9 W/A, PCE= 40%~47%

High Power VCSEL Epi Wafer - VCSEL

Application

P-Sensor; Biometric sensing; Automotive sensing; Time of Flight; IR illumination

Type

High Power

WL(nm)

940

Wafer size

4", 6"

Substrate

GaAs

Demonstration

Po= 5mW-5W, SE>0.9 W/A, PCE= 40%~47%

High Power VCSEL Epi Wafer - VCSEL

Application

LiDAR (MJ); Industrial 3D sensing, Blood oxygen detction

Type

High Power

WL(nm)

905

Wafer size

4", 6"

Substrate

GaAs

Demonstration

Single emitter(3J): SE >3.2 W/A, PCE ~56%
Single emitter(5J): SE >5.0 W/A, PCE ~53%

Customer service phone +886-37-580980

Factory

Office

+886-37-580980
2F., No. 6, Kedong 3rd Rd., Zhunan Township, Miaoli County 350401 , Taiwan (R.O.C.)
8:30~18:00
sales@best-epitaxy.com

+886-37-580980
5F., No. 50-3, Keyan Rd., Zhunan Township, Miaoli County 350401, Taiwan (R.O.C.)
8:30~18:00
sales@best-epitaxy.com

We also provide foundry service of customerized epitaxy wafers.

High Power VCSEL Epi Wafer - VCSEL

Application

Type

WL(nm)

Wafer size

Substrate

Demonstration

High Power VCSEL Epi Wafer - VCSEL

Application

Type

WL(nm)

Wafer size

Substrate

Demonstration

High Power VCSEL Epi Wafer - VCSEL

Application

Type

WL(nm)

Wafer size

Substrate

Demonstration

High Power VCSEL Epi Wafer - VCSEL

Application

Type

WL(nm)

Wafer size

Substrate

Demonstration

Customer service phone +886-37-580980

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